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Microchip Technology 0912GN-500LV
- Part Number:
0912GN-500LV
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
0912GN-500LV_Datesheet - Description:
RF MOSFET HEMT 50V 55-KR
- In stock 0
DESCRIPTION
· The 0912GN-500LV is a hermetically sealed, internally matched, common source, class AB GaN on SiC HEMT transistor.
· It provides over 16dB gain and 500 Watts of pulsed RF output power at 450μs pulse width, 35% duty factor across the 960 to 1215 MHz band.
· Utilizes gold metallization and eutectic attach for high reliability and ruggedness.
FEATURES
· Internal pre-match for optimal performance.
· Maximum power dissipation: 500 Watts.
· Drain-source voltage (V DSS): 150 V.
· Gate-source voltage (VGS): -8 to 0 V.
· Operating junction temperature: +250°C.
APPLICATIONS
· Broadband Data Link applications.
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Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology