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Microchip Technology 0912GN-650V
- Part Number:
0912GN-650V
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
0912GN-650V_Datesheet - Description:
RF MOSFET HEMT 50V 55-KR
- In stock 0
DESCRIPTION
· The 0912GN-650V is a class AB GaN on SiC HEMT transistor.
· It provides over 17dB gain and 650W pulsed RF output power.
· Operates at 128μs pulse width, 10% duty factor across 960-1215 MHz.
· Internally pre-matched for optimal performance.
· Utilizes gold metallization and eutectic attach for reliability.
FEATURES
· Maximum power dissipation: 1400W @ 25°C.
· Drain-source voltage (V_DS): 65V.
· Gate-source voltage (V_GS): -8 to +0V.
· Operating junction temperature: +225°C.
· Drain efficiency: 60% at 650W output.
· Thermal resistance: 0.16°C/W.
APPLICATIONS
· Broadband L-band avionics systems.
· DME, IFF, Transponders, and TCAS.
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Microchip Technology
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Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology