DESCRIPTION

· The 1011GN-2200VP is a GaN on SiC HEMT pallet, internally matched to 50Ω, designed for L-Band Avionics at 1030/1090 MHz.

· It delivers over 2200 Watts of pulsed output power with 19.4 dB gain and 70% drain efficiency at 32µs pulse width and 2% duty cycle.

· Features gold metallization and eutectic die attach for high reliability and ruggedness.

FEATURES

· Plug-and-play design with dual gate and drain bias feeds.

· Compact footprint of 2.0" x 3.4" x 0.175".

· Capable of handling Mode-S ELM and IFF pulse formats.

· Utilizes two single-ended 1011GN-1200VEL transistors for optimal SWaP.

APPLICATIONS

· Ideal for avionics systems requiring high power and efficiency in L-Band frequencies.

· Suitable for Mode-S ELM and IFF applications.

· Best for designs prioritizing Size, Weight, and Power (SWaP) efficiency.