DESCRIPTION

· The 1214GN-1200VG is a class AB GaN on SiC HEMT transistor.

· It provides over 16.3dB gain and 53% drain efficiency.

· Capable of 1200 Watts pulsed RF output power at 300μs pulse width, 10% duty factor.

· Operates across the 1200 to 1400 MHz band.

· Internally pre-matched for optimal performance.

· Utilizes gold metallization and eutectic attach for reliability.

FEATURES

· Maximum Power Dissipation: 2500 W.

· Drain-Source Voltage (V DSS): 65 V.

· Gate-Source Voltage (V GS): -8 to +0 V.

· Storage Temperature: -55 to +150 °C.

· Operating Junction Temperature: +200 °C.

· Output Power: 1200 W.

· Power Gain: 16.3 to 17.0 dB.

· Drain Efficiency: 54 to 60%.

· Load Mismatch Tolerance: 3:1.

· Thermal Resistance: 0.07 °C/W.

APPLICATIONS

· Ideal for L-band pulsed primary radar output stages.