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NXP A3T23H450W23SR6
- Part Number:
A3T23H450W23SR6
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant - Datasheet:
A3T23H450W23SR6_Datesheet - Description:
RF MOSFET LDMOS
- In stock 0
DESCRIPTION
· 87W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications.
· Operates in the frequency range of 2300 to 2400 MHz.
· Typical Doherty single-carrier W-CDMA performance at VDD=30Vdc, IDQA=650mA, VGSB=0.65Vdc, Pout=87W Avg.
FEATURES
· Advanced high-performance in-package Doherty design.
· Suitable for wide instantaneous bandwidth applications.
· Enhanced Class C operation with greater negative gate-source voltage range.
· Capable of withstanding high output VSWR and broadband operating conditions.
· Compatible with digital predistortion error correction systems.
APPLICATIONS
· Ideal for cellular base stations requiring wide bandwidth capabilities.
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