DESCRIPTION

· ALD310702A/ALD310702 are high precision monolithic quad P-Channel MOSFET arrays.
· Matched at the factory using ALD's EPAD® CMOS technology.
· Features precision -0.20V Gate Threshold Voltage for low voltage applications.
· High input impedance (2.5 x 10^10Ω) and high DC current gain (>10^8).
· Designed for exceptional matching of device electrical characteristics.
· Excellent temperature tracking characteristics.

FEATURES

· Precision matched Gate Threshold Voltages.
· Precision offset voltages: ALD310702A: 1mV typical, ALD310702: 2mV typical.
· Sub-threshold voltage operation.
· Low min. operating voltage of less than 0.2V.
· Ultra low min. operating current of less than 1nA.
· Nano-power operation.
· Wide dynamic operating current ranges.
· Exponential operating current ranges.
· Matched transconductance and output conductance.
· Matched and tracked temperature characteristics.
· Tight lot-to-lot parametric control.
· Positive, zero, and negative VGS(th) tempco bias currents.
· Low input capacitance.
· Low input/output leakage currents.

APPLICATIONS

· 0.5% precision current mirrors and current sources.
· Low Tempco (<= 50ppm/°C) current mirrors/sources.
· Energy harvesting circuits.
· Very low voltage analog and digital circuits.
· Backup battery circuits & power failure detectors.
· Precision low level voltage-clamps.
· Low level zero-crossing detector.
· Source followers and buffers.
· Precision capacitive probes and sensor interfaces.
· Precision charge detectors and charge integrators.
· Discrete differential amplifier input stage.
· Peak-detectors and level-shifters.
· High-side switches and Sample-and-Hold switches.
· Precision current multipliers.
· Discrete analog switches / multiplexers.
· Discrete voltage comparators.