Analog Technologies AM7314N-CT

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  • Part Number:

    AM7314N-CT

  • Manufacturer:

    Analog Technologies

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf AM7314N-CT_Datesheet

  • Description:

    MOSFET N-CH 100V 7A DFN3x3

  • In stock 4,200
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Specifications
Type
Paramete
Type
Paramete
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
58mOhm @ 4A, 4.5V
Package / Case
DFN3x3
FET Feature
-
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
2741 pF @ 15 V
Vgs (Max)
±20V
Qualification
-
Supplier Device Package
DFN3x3
Grade
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Vgs(th) (Max) @ Id
1V @ 250µA
Current - Continuous Drain (Id) @ 25°C
7A (Ta)
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 4.5 V
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
3.5W (Ta)
Overview

DESCRIPTION

· AM7314N is an N-Channel MOSFET with a Drain-Source Voltage (VDS) of 100V and a Drain Current (ID) of 7.0A at 25°C.

· Designed for surface mounting on a 1” x 1” FR4 board, it operates within a junction temperature range of -55°C to 150°C.



FEATURES

· Utilizes low rDS(on) trench technology for enhanced efficiency.

· Features low thermal impedance and fast switching speed.

· Maximum Gate-Source Voltage (VGS) is ±20V, with a pulsed drain current (IDM) of 28A.



APPLICATIONS

· Ideal for White LED boost converters, providing efficient power management.

· Suitable for automotive systems, ensuring reliable performance under varying conditions.

· Effective in industrial DC/DC conversion circuits, supporting robust power conversion needs.



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