Analog Technologies AM7356N-CT

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  • Part Number:

    AM7356N-CT

  • Manufacturer:

    Analog Technologies

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf AM7356N-CT_Datesheet

  • Description:

    MOSFET N-CH 100V 20A DFN3x3

  • In stock 750
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Specifications
Type
Paramete
Type
Paramete
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
414 pF @ 50 V
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
22W (Tc)
Rds On (Max) @ Id, Vgs
50mOhm @ 3.5A, 4.5V
Qualification
-
Mounting Type
Surface Mount
Grade
-
Supplier Device Package
DFN3x3
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Package / Case
DFN3x3
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 4.5 V
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Overview

DESCRIPTION



· The AM7356N is an N-Channel MOSFET designed for high-voltage applications, featuring a Drain-Source Voltage (VDS) of 100V and a Gate-Source Voltage (VGS) of ±20V. It operates efficiently across a temperature range from -55°C to 150°C, ensuring reliability in various environments.



FEATURES



· Low rDS(on) trench technology enhances efficiency and reduces power loss.

· Low thermal impedance ensures effective heat dissipation, improving device longevity.

· Fast switching speed facilitates rapid response in electronic circuits.



APPLICATIONS



· LED Inverter Circuits: Optimizes performance in lighting solutions.

· DC/DC Conversion Circuits: Ensures efficient power conversion in various devices.

· Motor Drives: Provides reliable control in motor applications.

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