DESCRIPTION

· Silicon Carbide N-Channel Power MOSFET

· Part of Microsemi's SiC MOSFET product line

· Enhances performance over traditional silicon MOSFET and IGBT solutions

· Reduces total cost of ownership in high-voltage applications

FEATURES

· Low on-resistance, stable across ambient temperatures

· Low capacitances and gate charge

· Fast switching due to low internal gate resistance (ESR)

· Operates reliably at high junction temperatures up to +175°C

· Features a fast and reliable body diode

· Superior avalanche ruggedness

APPLICATIONS

· PV inverters, converters, and industrial motor drives

· Smart grid transmission and distribution

· Induction heating and welding

· H/EV powertrains and EV chargers

· Power supply and distribution systems