ANBON SEMICONDUCTOR (INT'L) LIMITED B5819WS

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Specifications
Type
Paramete
Type
Paramete
Current - Average Rectified (Io)
1A
Mounting Type
Surface Mount
Qualification
-
Technology
Schottky
Voltage - Forward (Vf) (Max) @ If
600 mV @ 1 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
1 mA @ 40 V
Operating Temperature - Junction
-55°C ~ 125°C
Supplier Device Package
SOD-323
Grade
-
Package / Case
SC-76, SOD-323
Capacitance @ Vr, F
120pF @ 4V, 1MHz
Reverse Recovery Time (trr)
-
Voltage - DC Reverse (Vr) (Max)
40 V
Overview

DESCRIPTION

· The B5817WS through B5819WS series are Schottky barrier diodes designed for high efficiency applications.



FEATURES

· Low forward voltage drop for reduced power loss.
· High current capability for robust performance.
· Fast switching speed for improved efficiency.
· High temperature operation up to 125°C.
· Compact SOD-123 package for space-saving designs.



APPLICATIONS

· Power supply circuits for enhanced efficiency.
· Reverse polarity protection in electronic devices.
· DC-DC converters for energy management.
· Solar panel bypass diodes for improved reliability.
· Automotive electronics for high temperature environments.

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We ship orders once a day around 5 p.m., except Sunday. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

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ANBON SEMICONDUCTOR (INT'L) LIMITED