BAT54S-E3-08 Device Information Summary

Basic Information

• Manufacturer: Vishay Semiconductors
• Device Name: BAT54S-E3-08
• Type: Small Signal Schottky Diode (Dual Diodes in Series)

Ordering Information

• Part Number: BAT54S-E3-08
• Package: SOT-23
• Packaging: 3K per 7" reel (8 mm tape), 15K per box

Features

• Very Low Turn-On Voltage: Ensures minimal power loss during operation.
• Fast Switching Speed: Ideal for high-frequency applications.
• PN Junction Guard Ring: Provides protection against excessive voltage, such as electrostatic discharges.
• AEC-Q101 Qualified: Available for automotive applications.
• RoHS-Compliant: Meets environmental standards for commercial use.

Mechanical Data

• Case: SOT-23
• Weight: Approximately 8.8 mg
• Top View Marking: L44

Absolute Maximum Ratings (Tamb = 25 °C)

• Repetitive Peak Reverse Voltage (VRRM): 30 V
• Forward Continuous Current (IF): 200 mA
• Repetitive Peak Forward Current (IFRM): 300 mA
• Surge Forward Current (IFSM): 600 mA (tp < 1 s)
• Power Dissipation (Ptot): 230 mW

Thermal Characteristics (Tamb = 25 °C)

• Thermal Resistance, Junction to Ambient (RthJA): 430 K/W
• Junction Temperature (Tj): 125 °C
• Storage Temperature Range (Tstg): -65 to +150 °C
• Operating Temperature Range (Top): -55 to +125 °C

Electrical Characteristics (Tamb = 25 °C)

• Reverse Breakdown Voltage (V(BR)): 30 V (IR = 100 μA, pulsed)
• Leakage Current (IR): 2 μA (Pulsed test tp < 300 μs, δ < 2% at VR = 25 V)
• Forward Voltage (VF)240 mV (IF = 0.1 mA, tp < 300 μs, δ < 2%)320 mV (IF = 1 mA, tp < 300 μs, δ < 2%)400 mV (IF = 10 mA, tp < 300 μs, δ < 2%)500 mV (IF = 30 mA, tp < 300 μs, δ < 2%)800 mV (IF = 100 mA, tp < 300 μs, δ < 2%)
• Diode Capacitance (CD): 10 pF (VR = 1 V, f = 1 MHz)
• Reverse Recovery Time (trr): 5 ns (IF = 10 mA to IR = 10 mA, R = 1 mA, RL = 100 Ω)

Typical Characteristics (Tamb = 25 °C)

• Forward Voltage vs. Forward Current: The forward voltage (VF) increases with increasing forward current (IF), ranging from 240 mV at 0.1 mA to 800 mV at 100 mA.
• Diode Capacitance vs. Reverse Voltage: The diode capacitance (CD) varies with reverse voltage (VR), typically around 10 pF at 1 V.
• Reverse Current vs. Reverse Voltage: The reverse current (IR) increases with increasing reverse voltage (VR), with typical values ranging from 0.1 µA to 1000 µA over the VR range.

Package Dimensions (SOT-23)

• Length: 2.8 mm (0.110")
• Width: 1.25 mm (0.049")
• Height: 1.0 mm (0.039")
• Lead Length: 0.9 mm (0.035")
• Lead Width: 0.45 mm (0.018")
• Lead Thickness: 0.35 mm (0.014")