Infineon Technologies BCR10PNH6730XTMA1

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Specifications
Type
Paramete
Type
Paramete
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Mounting Type
Surface Mount
Qualification
-
Current - Collector (Ic) (Max)
100mA
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector Cutoff (Max)
-
Voltage - Collector Emitter Breakdown (Max)
50V
Frequency - Transition
130MHz
Grade
-
Supplier Device Package
PG-SOT363-PO
Power - Max
250mW
Resistor - Emitter Base (R2)
10kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Package / Case
6-VSSOP, SC-88, SOT-363
Resistor - Base (R1)
10kOhms
Overview

DESCRIPTION

· 2011-09-22 1BCR10PN NPN/PNP Silicon Digital Transistor Array



FEATURES

· Two internal isolated NPN/PNP Transistors in one package

· Built-in bias resistor NPN and PNP (R1=10 kΩ, R2=10 kΩ)

· Pb-free (RoHS compliant) package

· Qualified according to AEC Q101



APPLICATIONS

· Switching circuit

· Inverter

· Interface circuit

· Driver circuit



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