DESCRIPTION

· NPN Silicon Darlington Transistors designed for general AF applications.

· High collector current and high current gain characteristics.

· Complementary types available: BCV26, BCV46 (PNP).

· Pb-free package, compliant with RoHS standards.

· Qualified according to AEC Q101 standards.

FEATURES

· Collector-emitter voltage (VCEO): 30V for BCV27, 60V for BCV47.

· Collector-base voltage (VCBO): 40V for BCV27, 80V for BCV47.

· Emitter-base voltage (VEBO): 10V.

· Collector current (IC): 500mA.

· Peak collector current (ICM): 800mA for tp ≤ 10ms.

· Base current (IB): 100mA.

· Peak base current (IBM): 200mA.

· Total power dissipation (Ptot): 360mW at TS ≤ 74°C.

· Junction temperature (Tj): 150°C.

· Storage temperature (Tstg): -65°C to 150°C.

APPLICATIONS

· Suitable for general audio frequency (AF) applications.

· Ideal for circuits requiring high current gain and high collector current.