DESCRIPTION

· PNP silicon power transistors designed for complementary use with the BD241 series.

· Obsolete series, not recommended for new designs.

FEATURES

· 40W power dissipation at 25°C case temperature.

· 3A continuous collector current, 5A peak collector current.

· Customer-specified selections available.

· Absolute maximum ratings include: VCER -55V to -115V, VCEO -45V to -100V, VEBO -5V.

· Linear derating to 150°C case temperature at 0.32W/°C, free air temperature at 16mW/°C.

· Inductive load capability: L=20mH, IB(on)=-0.4A, RBE=100Ω, VBE(off)=0, RS=0.1Ω, VCC=-20V.

APPLICATIONS

· Suitable for power amplification and switching applications.

· Designed for use in circuits requiring complementary PNP transistors.