Name: BD250B-S
Brand: Bourns Inc.
SKU: JM-BD250B-S
Availability: InStock

Bourns Inc. BD250B-S

View All Single Bipolar Transistors by Bourns Inc.

Part Number:
BD250B-S
Manufacturer:
Bourns Inc.
Category:
Single Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
BD250B-S_Datesheet
Description:
TRANS PNP 80V 25A SOT93
In stock 0

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Specifications

Type

Paramete

Type

Paramete

Vce Saturation (Max) @ Ib, Ic

4V @ 5A, 25A

Voltage - Collector Emitter Breakdown (Max)

80 V

Power - Max

3 W

Current - Collector Cutoff (Max)

1mA

Frequency - Transition

Grade

Mounting Type

Through Hole

Supplier Device Package

SOT-93

Qualification

Transistor Type

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce

10 @ 15A, 4V

Operating Temperature

-65°C ~ 150°C (TJ)

Package / Case

TO-218-3

Current - Collector (Ic) (Max)

25 A

Overview

DESCRIPTION

· PNP silicon power transistors designed for complementary use with the BD249 series.
· Suitable for high-power applications with a continuous collector current of 25 A and a peak collector current of 40 A.
· Maximum power dissipation of 125 W at 25°C case temperature.
· Available in customer-specified selections for tailored applications.

FEATURES

· High collector-emitter voltage ratings ranging from -55 V to -115 V.
· Continuous device dissipation of 125 W at 25°C case temperature, derating linearly to 150°C.
· Unclamped inductive load energy capability of 290 mJ.
· Wide operating junction temperature range from -65°C to +150°C.
· Robust storage temperature range from -65°C to +150°C.

APPLICATIONS

· Ideal for use in power amplification and switching circuits.
· Suitable for complementary pairing with the BD249 series in push-pull configurations.
· Commonly used in industrial and automotive power systems.
· Effective in applications requiring high current and voltage handling capabilities.

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