Infineon Technologies BFN18H6327XTSA1

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Specifications
Type
Paramete
Type
Paramete
Current - Collector Cutoff (Max)
100nA (ICBO)
Qualification
AEC-Q101
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
300 V
Current - Collector (Ic) (Max)
200 mA
Operating Temperature
150°C (TJ)
Grade
Automotive
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 30mA, 10V
Frequency - Transition
70MHz
Mounting Type
Surface Mount
Package / Case
TO-243AA
Power - Max
1.5 W
Supplier Device Package
PG-SOT89
Overview

DESCRIPTION

· BFN18 is a high-voltage NPN silicon transistor designed for robust performance in demanding applications.



FEATURES

· High-voltage capability ensures reliable operation in high-stress environments.

· Low saturation voltage enhances efficiency in switching applications.

· Excellent current handling capacity supports high-power operations.

· Robust construction provides durability and long-term reliability.



APPLICATIONS

· Suitable for use in high-voltage power supplies and converters.

· Ideal for switching applications in industrial and automotive systems.

· Effective in RF and protection devices requiring high-voltage tolerance.

· Commonly used in electronic ballasts and lighting systems.



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IMPORTANT NOTICE

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2. Our sales manager will double-check the order and keep you posted on any price or stock changes. No worries, we've got you covered. 

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Shipping Rate

We ship orders once a day around 5 p.m., except Sunday. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

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Shipping Methods

We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.

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Payment

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