Rohm Semiconductor BR25L010F-WE2

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  • Part Number:

    BR25L010F-WE2

  • Manufacturer:

    Rohm Semiconductor

  • Category:

    Memory

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf BR25L010F-WE2_Datesheet

  • Description:

    IC EEPROM 1KBIT SPI 5MHZ 8SOP

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Memory Format
EEPROM
Memory Type
Non-Volatile
Operating Temperature
-40°C ~ 85°C (TA)
Clock Frequency
5 MHz
Grade
-
Mounting Type
Surface Mount
Technology
EEPROM
Write Cycle Time - Word, Page
5ms
Access Time
-
Voltage - Supply
1.8V ~ 5.5V
Supplier Device Package
8-SOP
Memory Interface
SPI
Memory Organization
128 x 8
Memory Size
1Kbit
Package / Case
8-SOIC (0.173", 4.40mm Width)
Qualification
-
Overview

DESCRIPTION

· The BR25Lxxx-W series is a serial EEPROM utilizing the SPI BUS interface method, designed for high reliability and efficiency in data storage and retrieval.



FEATURES

· Supports high-speed clock operations up to 5MHz.
· Features a wait function via the HOLD terminal.
· Allows setting parts or all of the memory arrays as read-only.
· Operates on a single power source from 1.8V to 5.5V, ideal for battery-powered devices.
· Includes a page write mode for initial value settings during factory shipment.
· Ensures highly reliable connections using Au pad and Au wire.
· Compatible with SPI bus interface modes (CPOL, CPHA) = (0, 0), (1, 1).
· Offers auto erase and auto end functions during data rewrite.
· Low current consumption: 1.5mA (Typ.) at write, 1.0mA (Typ.) at read, and 0.1 μA (Typ.) at standby.
· Includes an address auto increment function during read operations.
· Provides multiple write mistake prevention functions including power-on write prohibition, command code write prohibition, WP pin write prohibition, and block setting via status registers.
· Ships with memory array initialized to FFh and status registers WPEN, BP1, BP0 set to 0.
· Data retention guaranteed for 40 years.
· Supports up to 1,000,000 data rewrite cycles.



APPLICATIONS

· Suitable for a wide range of applications requiring reliable non-volatile memory storage, particularly in environments where battery power is utilized.

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