Rohm Semiconductor BR25L010FVJ-WE2

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  • Part Number:

    BR25L010FVJ-WE2

  • Manufacturer:

    Rohm Semiconductor

  • Category:

    Memory

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf BR25L010FVJ-WE2_Datesheet

  • Description:

    IC EEPROM 1KBIT SPI 5MHZ 8TSSOP

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Technology
EEPROM
Memory Type
Non-Volatile
Memory Interface
SPI
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C (TA)
Clock Frequency
5 MHz
Memory Size
1Kbit
Supplier Device Package
8-TSSOP-BJ
Qualification
-
Grade
-
Access Time
-
Memory Organization
128 x 8
Voltage - Supply
1.8V ~ 5.5V
Write Cycle Time - Word, Page
5ms
Memory Format
EEPROM
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Overview

DESCRIPTION

· The BR25Lxxx-W series is a serial EEPROM utilizing the SPI BUS interface.



FEATURES

· High-speed clock operation up to 5MHz (Max).

· HOLD terminal for wait function.

· Configurable read-only memory areas.

· Single power source operation from 1.8V to 5.5V, ideal for battery use.

· Page write mode for initial value writing at factory shipment.

· Reliable connection with Au pad and Au wire.

· SPI bus interface compatibility with (CPOL, CPHA) = (0, 0), (1, 1).

· Auto erase and auto end functions during data rewrite.

· Low current consumption: 1.5mA (Typ.) at write, 1.0mA (Typ.) at read, 0.1 μA (Typ.) at standby.

· Address auto increment function during read.

· Write mistake prevention functions including power-on write prohibition, command code (WRDI) write prohibition, WP pin write prohibition, and block setting by status registers (BP1, BP0).

· Data retention for 40 years.

· Data rewrite capability up to 1,000,000 times.



APPLICATIONS

· Suitable for various electronic devices requiring reliable and efficient data storage and retrieval.

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