BSP317PH6327XTSA1 Product Summary

Basic Information

• Part Number: BSP317PH6327XTSA1
• Package Type: PG-SOT223
• Reel Information: H6327, 1000 pcs/reel

Electrical Characteristics

• Drain-Source Voltage (VDS): -250 V
• Drain Current (ID):Continuous: -0.43 A (TA=25°C), -0.34 A (TA=70°C)Pulsed: -1.72 A (TA=25°C)
• Gate-Source Voltage (VGS): ±20 V
• Power Dissipation (Ptot): 1.8 W (TA=25°C)
• Operating and Storage Temperature (Tj, Tstg): -55... +150 °C
• ESD Class: JESD22-A114-HBM Class 1b
• Halogen-Free: Compliant with IEC61249-2-21

Thermal Characteristics

• Thermal Resistance (RthJS): 15 to 25 K/W
• Thermal Resistance (RthJA):SMD version, min. footprint: 80 to 115 K/WSMD version, 6 cm² cooling area: 48 to 70 K/W

Static Characteristics

• Drain-Source Breakdown Voltage (V(BR)DSS): -250 V
• Gate Threshold Voltage (VGS(th)): -1 to -2 V
• Zero Gate Voltage Drain Current (IDSS): -0.1 to -10 µA (Tj=25°C), -0.2 to -100 µA (Tj=150°C)
• Gate-Source Leakage Current (IGSS): -10 to -100 nA
• Drain-Source On-State Resistance (RDS(on)):VGS=-4.5V, ID=-0.39A: 3.3 to 5 ΩVGS=-10V, ID=-0.43A: 3 to 4 Ω

Dynamic Characteristics

• Transconductance (gfs): 0.38 to 0.76 S
• Input Capacitance (Ciss): 210 to 262 pF
• Output Capacitance (Coss): 30 to 37 pF
• Reverse Transfer Capacitance (Crss): 13.4 to 16.7 pF
• Turn-On Delay Time (td(on)): 5.7 to 8.5 ns
• Rise Time (tr): 11.1 to 16.6 ns
• Turn-Off Delay Time (td(off)): 254 to 381 ns
• Fall Time (tf): 67 to 100 ns

Gate Charge Characteristics

• Gate to Source Charge (Qgs): -0.5 to -0.65 nC
• Gate to Drain Charge (Qgd): -4 to -5.2 nC
• Total Gate Charge (Qg): -11.6 to -15.1 nC
• Gate Plateau Voltage (V(plateau)): -2.8 V

Reverse Diode Characteristics

• Inverse Diode Continuous Forward Current (IS): -0.43 A (TA=25°C)
• Inverse Diode Pulsed Current (ISM): -1.72 A
• Inverse Diode Forward Voltage (VSD): -0.84 to -1.2 V
• Reverse Recovery Time (trr): 92 to 138 ns
• Reverse Recovery Charge (Qrr): 210 to 315 nC

Additional Information

• Qualified According to: AEC Q101
• Packaging: Non-dry