DESCRIPTION

· The product is a Photo Reflector designed for object detection and contactless switching.

· It consists of a GaAs Infrared Light Emitting Diode and an NPN Si Photo Transistor.

· The structure is a non-interference type with a glass board and vacuum evaporation.

FEATURES

· Forward Voltage (VF): 1.3V to 1.5V at IF=50 mA.

· Reverse Current (IR): Max 10 µA at VR=3 V.

· Capacitance (Ct): Max 30 pF at VR=0 V, f=1 MHz.

· Collector to Emitter Dark Current (ICEO): Max 200 nA at VCE=10 V.

· Collector Current (IC): 90 µA to 880 µA at VCC=5 V, IF=10 mA, RL=100 Ω, d=1 mm.

· Switching Time (tr, tf): Max 20 µs at VCC=5 V, IC=0.1 mA, RL=100 Ω.

· Collector-Emitter Saturation Voltage (VCE(sat)): Max 0.4 V at IF=20 mA, IC=0.1 mA.

APPLICATIONS

· Object detection in various electronic devices.

· Contactless switching applications.