Central Semiconductor Corp CP302-MPSH10-CT20

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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
Die
Transistor Type
NPN
Frequency - Transition
650MHz
Grade
-
Qualification
-
Voltage - Collector Emitter Breakdown (Max)
25V
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 4mA, 10V
Noise Figure (dB Typ @ f)
-
Gain
-
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Current - Collector (Ic) (Max)
-
Package / Case
Die
Power - Max
350mW
Overview

DESCRIPTION

· The CP302-MPSH10 is a silicon NPN RF transistor designed for low noise UHF/VHF amplifier and high output oscillator applications.



FEATURES

· Die size: 14.5 x 14.5 MILS

· Die thickness: 9.0 MILS

· Base bonding pad size: 2.3 x 2.3 MILS

· Emitter bonding pad size: 2.5 x 2.3 MILS

· Top side metalization: Al – 30,000Å

· Back side metalization: Au – 18,000Å

· Wafer diameter: 4 INCHES

· Gross die per wafer: 53,730



APPLICATIONS

· Low noise UHF/VHF amplifiers

· High output oscillators

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