Central Semiconductor Corp CSDD-25M BK

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  • Part Number:

    CSDD-25M BK

  • Manufacturer:

    Central Semiconductor Corp

  • Category:

    SCRs

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf CSDD-25M BK_Datesheet

  • Description:

    SCR 600V 25A D2PAK

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
SCR Type
Standard Recovery
Voltage - Gate Trigger (Vgt) (Max)
1.5 V
Voltage - Off State
600 V
Current - Hold (Ih) (Max)
50 mA
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
Voltage - On State (Vtm) (Max)
1.8 V
Current - Non Rep. Surge 50, 60Hz (Itsm)
250A, 260A
Current - Gate Trigger (Igt) (Max)
30 mA
Current - Off State (Max)
10 µA
Mounting Type
Surface Mount
Grade
-
Operating Temperature
-40°C ~ 125°C (TJ)
Qualification
-
Current - On State (It (AV)) (Max)
50 A
Current - On State (It (RMS)) (Max)
25 A
Overview

DESCRIPTION

· Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems.



FEATURES

· Peak Repetitive Off-State Voltage: 600V (CSDD-25M), 800V (CSDD-25N).

· RMS On-State Current: 25A at TC=90°C.

· Peak Non-Repetitive Surge Current: 260A at t=8.3ms, 250A at t=10ms.

· I2t Value for Fusing: 310 A2s at t=10ms.

· Peak Gate Power: 40W at tp=10μs.

· Average Gate Power Dissipation: 1.0W.

· Peak Forward Gate Current: 4.0A at tp=10μs.

· Peak Forward Gate Voltage: 16V at tp=10μs.

· Peak Reverse Gate Voltage: 5.0V at tp=10μs.

· Critical Rate of Rise of On-State Current: 100 A/μs.

· Operating Junction Temperature: -40 to +125°C.

· Storage Temperature: -40 to +150°C.

· Thermal Resistance: ΘJA 60°C/W, ΘJC 1.3°C/W.



APPLICATIONS

· Sensing circuit applications.

· Control systems.

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