DESCRIPTION

· CY7C419/21/25/29/33 are asynchronous FIFO memories with capacities ranging from 256x9 to 4Kx9.

· Organized for sequential data read/write operations with Full and Empty flags to prevent overrun and underrun.

· Supports asynchronous read/write operations at up to 50.0 MHz.

· Features depth and width expansion capabilities with minimal propagation delay.

· Fabricated using 0.65-micron P-well CMOS technology with ESD protection exceeding 2000V.

FEATURES

· Dual-ported RAM cell for independent read/write operations.

· Low operating power consumption at 35 mA.

· TTL compatible with Empty, Full, and Half Full flags.

· Retransmit capability in standalone mode.

· Available in PLCC, TQFP, SOJ, and DIP packages, including Pb-Free options.

· Pin and functionally compatible with IDT7200 series and AM7200 series.

APPLICATIONS

· Ideal for data buffering in high-speed communication systems.

· Suitable for applications requiring asynchronous data transfer.

· Used in systems needing data retransmission capabilities.

· Applicable in environments requiring expandable memory width and depth.

· Effective in systems where low power consumption and high ESD protection are critical.