DESCRIPTION

· 8G bits DDR4 SDRAM with various configurations: 1024M words x 8 bits and 512M words x 16 bits.

· Available in 78-ball and 96-ball FBGA packages, lead-free and halogen-free.

· Operates at JEDEC standard 1.2V power supply with VDD = 1.2V ± 0.06V and VPP = 2.5V +0.25V/-0.125V.

· Supports data rates up to 3200/2666Mbps.

· Features 16 or 8 internal banks depending on the configuration.

· Interface type: Pseudo Open Drain (POD).

· Operating temperature ranges: 0°C to +95°C (Commercial) and -40°C to +95°C (Industrial).

FEATURES

· Double-data-rate architecture enabling two data transfers per clock cycle.

· Bi-directional differential data strobe (DQS and /DQS) for data capture.

· Differential clock inputs (CK_t and CK_c) with DLL alignment for DQ and DQS transitions.

· Supports Write Cycle Redundancy Code (CRC) and programmable preamble for read/write operations.

· Dynamic On Die Termination and two termination states (RTT_PARK and RTT_NOM).

· Asynchronous RESET pin and ZQ calibration support.

· Compliance with RoHS directive and internal Vref DQ level generation.

· Advanced features like TCAR, LP ASR, Command Address Parity, and Fine Granularity Refresh.

APPLICATIONS

· Suitable for high-performance computing systems requiring high-speed data transfer.

· Ideal for applications needing robust memory solutions in commercial and industrial environments.

· Used in systems that benefit from advanced memory management features like self-refresh and auto-refresh.

· Applicable in scenarios requiring efficient power management and thermal control.