DESCRIPTION

· Three-layer, two-terminal, axial lead, hermetically sealed DIACs designed for triggering thyristors.

FEATURES

· Power dissipation on Printed Circuit (l=10mm): 150mW at TA=65°C.

· Repetitive Peak on-state Current (ITRM): 2.0A at tp=10µs, f=120Hz.

· Breakover Voltage (VBO): Min 30V, Typ 32V, Max 34V at VC=22nF.

· Breakover Current (IBO(max)): 15µA at C=22nF.

· Rise Time (Tr): 2µs (max).

· Leakage Current (IB(max)): 10µA at VB=0.5V BO(max).

· Storage Temperature: -40°C to +125°C.

· Thermal Resistance Junction to Lead: 167°C/W.

· Thermal Resistance Junction to Ambient: 400°C/W.

· Operating Temperature: -40°C to +125°C.

· Lead Free Finish/RoHS Compliant.

· Moisture Sensitivity: Level 1 per J-STD-020C.

APPLICATIONS

· Thyristor phase control circuits.

· Lamp dimming circuits.

· Universal motor speed control.

· Heat control circuits.