DESCRIPTION

· Three-layer, two-terminal, axial lead, hermetically sealed DIACs designed for triggering thyristors.

· Suitable for phase control circuits in thyristor applications.

FEATURES

· Power dissipation on Printed Circuit (l=10mm) PC: 150mW at TA=65°C.

· Repetitive Peak on-state Current (ITRM): 2.0A.

· Breakover Voltage Symmetry: ±3V with C=22nF.

· Breakover Voltage (VBO): DB3 (28-32-36V), DC34 (30-34-38V), DB4 (35-40-45V).

· Breakover Current (IBO): max 100µA.

· Rise Time (Tr): 1.5µs.

· Leakage Current (IB): max 10µA at VB=0.5VBO.

· Operating Temperature: -40°C to +125°C.

· Storage Temperature: -40°C to +125°C.

· Thermal Resistance Junction to Lead: 167°C/W.

· Thermal Resistance Junction to Ambient: 400°C/W.

APPLICATIONS

· Phase control in thyristor circuits.

· Lamp dimming circuits.

· Universal motor speed control.

· Heat control systems.