DESCRIPTION

· The DC35 GN-15-D3 is a common source, class AB GaN on SiC HEMT transistor.

· It provides over 18dB gain and 15 Watts of RF output power across the 30-3500 MHz band.

· Housed in a 3x6mm Plastic DFN SMT package, it is compact and lightweight.

FEATURES

· Unmatched broadband transistor suitable for narrow or broadband pulsed or CW applications.

· Maximum power dissipation of 20W at 85°C.

· Drain-source voltage up to 65V and gate-source voltage range from -8V to -2V.

· Operating junction temperature up to +200°C.

APPLICATIONS

· Suitable for RF power amplification in various frequency bands.

· Ideal for both continuous wave (CW) and pulsed applications.

· Can be used in compact, high-efficiency RF systems.