Infineon Technologies DF80R12W2H3FB11BOMA1

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  • Part Number:

    DF80R12W2H3FB11BOMA1

  • Manufacturer:

    Infineon Technologies

  • Category:

    Bridge Rectifiers

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf DF80R12W2H3FB11BOMA1_Datesheet

  • Description:

    MOD DIODE BRIDGE EASY1B-2-1

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
-
Voltage - Forward (Vf) (Max) @ If
950 mV @ 30 A
Qualification
-
Grade
-
Package / Case
Module
Voltage - Peak Reverse (Max)
1.2 kV
Current - Reverse Leakage @ Vr
100 µA @ 1200 V
Technology
Standard
Operating Temperature
-40°C ~ 150°C (TJ)
Diode Type
Single Phase
Mounting Type
Chassis Mount
Current - Average Rectified (Io)
50 A
Overview

DESCRIPTION



· IGBT Module DF80R12W2H3F_B11 with preliminary data, UL approved (E83335), revision 2.0, published on 2013-11-11.



FEATURES



· High-Speed IGBT H3 with low switching losses.
· thinQ H SiC Schottky diode 1200V.
· Al2O3 substrate with low thermal resistance.
· Integrated NTC temperature sensor.
· Compact design with PressFIT contact technology.



APPLICATIONS



· Solar applications.

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