Diodes Incorporated DMN3112SQ-7

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  • Part Number:

    DMN3112SQ-7

  • Manufacturer:

    Diodes Incorporated

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf DMN3112SQ-7_Datesheet

  • Description:

    MOSFET BVDSS: 25V~30V SOT23 T&R

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
FET Feature
-
FET Type
N-Channel
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Continuous Drain (Id) @ 25°C
5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds
268 pF @ 5 V
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Qualification
AEC-Q101
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
57mOhm @ 5.8A, 10V
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Supplier Device Package
SOT-23-3
Grade
Automotive
Vgs (Max)
±20V
Power Dissipation (Max)
1.4W (Ta)
Mounting Type
Surface Mount
Overview

DESCRIPTION

· This MOSFET is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, ideal for high-efficiency power management applications.



FEATURES

· Low On-Resistance

· Low Gate Threshold Voltage

· Low Input Capacitance

· Fast Switching Speed

· Low Input/Output Leakage

· Totally Lead-Free & Fully RoHS Compliant

· Halogen and Antimony Free. "Green" Device

· Suitable for automotive applications, AEC-Q101 qualified, PPAP capable, manufactured in IATF 16949 certified facilities.



APPLICATIONS

· General Purpose Interfacing Switch

· Power Management Functions

· Boost Application

· Analog Switch

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