DESCRIPTION

· The EM68D16CBQC is a high-speed CMOS DDR2 SDRAM with 2048 Mbits and a 16-bit wide data I/O.

· Internally configured as an 8-bank DRAM, it supports 8 banks x 16Mb addresses x 16 I/Os.

· Complies with DDR2 DRAM key features including posted CAS# with additive latency, Write latency = Read latency -1, OCD impedance adjustment, and ODT.

· Operates with differential clocks and bidirectional strobes for synchronization.

· Supports auto precharge function for self-timed row precharge at the end of burst sequences.

FEATURES

· JEDEC Standard Compliant with 1.8V I/O (SSTL_18-compatible).

· Power supplies: VDD & VDDQ = +1.8V ± 0.1V.

· Operating temperature: TC = 0 ~ 85 °C.

· Fast clock rate: 333/400/533 MHz.

· 8 internal banks for concurrent operation and 4-bit prefetch architecture.

· Programmable Mode & Extended Mode registers.

· Burst lengths: 4 or 8 with Sequential/Interleave burst type.

· DLL enable/disable and On-die termination (ODT).

· RoHS compliant with Auto Refresh and Self Refresh capabilities.

· Package: 84-ball 8 x 12.5 x 1.2mm (max) FBGA, Pb Free and Halogen Free.

APPLICATIONS

· Suitable for high-speed data processing and storage applications.

· Ideal for use in systems requiring efficient memory management and high data transfer rates.

· Applicable in environments where RoHS compliance and low power consumption are critical.

· Used in devices that benefit from advanced DDR2 features like OCD impedance adjustment and ODT.