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EPC EPC2012
- Part Number:
EPC2012
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant - Datasheet:
EPC2012_Datesheet - Description:
GANFET N-CH 200V 3A DIE
- In stock 0
DESCRIPTION
· EPC2012 eGaN® FET is an enhancement mode power transistor with a VDSS of 200 V and RDS(ON) of 100 mΩ.
· Manufactured using Gallium Nitride grown on Silicon Wafers with standard CMOS equipment.
· Designed for high switching frequency and low on-time applications, with minimal on-state losses.
FEATURES
· Ultra High Efficiency.
· Ultra Low RDS(on).
· Ultra low QG.
· Ultra small footprint.
· Majority carrier diode provides exceptionally low QG and zero QRR.
APPLICATIONS
· High Speed DC-DC conversion.
· Class D Audio.
· Hard Switched and High Frequency Circuits.
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