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IXYS FII50-12E
- Part Number:
FII50-12E
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Non-RoHS Compliant - Datasheet:
FII50-12E_Datesheet - Description:
IGBT H BRIDGE 1200V 50A I4PAK5
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FII 50-12E – 1200 V / 50 A NPT3 IGBT Phase-Leg Module
with HiPerFRED™ Free-Wheeling Diodes, ISOPLUS i4-PAC™ Package
1. Device Overview
FII 50-12E is a two-switch phase-leg power module integrating:
- 2 × 1200 V NPT3 IGBTs (50 A DC at 25 °C)
- 2 × 1200 V HiPerFRED™ anti-parallel diodes
- in the electrically-isolated ISOPLUS i4-PAC™ package.
It is optimised for 20 kHz hard-switching and resonant topologies where low saturation voltage, fast switching and short tail current are mandatory.
2. Absolute Maximum Ratings (TJ = 25 °C unless noted)
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Collector-emitter voltage | VCES | 1200 | V | TJ = –55 … +150 °C |
| Continuous collector current | IC25 | 50 | A | TC = 25 °C |
| Continuous collector current | IC90 | 32 | A | TC = 90 °C |
| Repetitive peak current | ICM | 50 | A | tp = 1 ms, VGE = ±15 V |
| Short-circuit withstand | tSC | 10 | µs | VCE = 900 V, VGE = ±15 V, RG = 39 Ω, TJ = 125 °C |
| Gate-emitter voltage | VGES | ±20 | V | – |
| Total power dissipation | Ptot | 200 | W | TC = 25 °C (per switch) |
| Operating junction temp. | TVJ | –55 … +150 | °C | – |
| Storage temperature | Tstg | –55 … +125 | °C | – |
| Isolation voltage | VISOL | 2500 | VAC | 50/60 Hz, 1 mA, 1 min |
| Mounting force | FC | 20 … 120 | N | with clip |
3. Characteristic Data (TJ = 25 °C, VGE = 15 V)
| Parameter | Symbol | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|
| Saturation voltage | VCE(sat) | 2.0 | 2.6 | V | IC = 30 A, 25 °C |
| Saturation voltage | VCE(sat) | 2.3 | – | V | IC = 30 A, 125 °C |
| Threshold voltage | VGE(th) | 4.5 | 6.5 | V | IC = 1 mA |
| Leakage current | ICES | 0.4 | – | mA | VCE = 1200 V, VGE = 0 V |
| Gate charge | QGon | 250 | – | nC | VCE = 600 V, IC = 30 A |
| Input capacitance | Cies | 2 | – | nF | VCE = 25 V, f = 1 MHz Switching energy (inductive load, 600 V, 30 A, RG = 39 Ω, TJ = 125 °C) Eon = 4.6 mJ, Eoff = 2.2 mJ Diode forward drop (IF = 30 A) VF = 2.4 V (25 °C), 1.8 V (125 °C) Reverse-recovery time trr = 180 ns, Erec(off) = 1.8 mJ |
4. Thermal Resistances
| Junction → case (IGBT) | RthJC | 0.6 | K/W | per switch |
| Junction → case (Diode) | RthJC | 1.3 | K/W | per diode |
| Junction → heatsink | RthJH | 1.2 | K/W | with compound |
5. Package & Mechanical
- Outline: ISOPLUS i4-PAC™, 4-terminal, isolated metal base
- Creepage/clearance: 5.5 mm pin-to-backside, 1.7 mm pin-to-pin
- Mass: 9 g
- UL registered (E 72873)
- Solderable pins, clip or screw mounting
6. Applications
- Single-phase leg (buck/boost, chopper)
- H-bridge & three-phase inverters (UPS, servo, SMPS)
- Induction-heating resonant converters
- Four-quadrant DC drives / controlled rectifiers
- Motor drives up to 15 kVA (with proper heatsink)
7. Simulation Models (typical)
IGBT (125 °C): V = 0.95 V + 45 mΩ · I
Diode (125 °C): V = 1.26 V + 15 mΩ · I
Thermal Cauer network supplied for both chips (0.067–0.175 J/K, 0.108–0.963 K/W)
8. Part Number Key
FII 50-12E
- FII = family (Fast IGBT ISOPLUS i4-PAC)
- 50 = 50 A nominal current
- 12 = 1200 V voltage class
- E = engineering revision (NPT3 IGBT + HiPerFRED diode)
9. Summary
FII 50-12E delivers a rugged 1200 V / 50 A phase-leg in an isolated low-inductance footprint, combining low VCE(sat) NPT3 IGBTs and ultra-fast soft-recovery diodes. The module is tailored for high-frequency hard-switching or resonant power converters requiring reliable parallel operation, thermal ruggedness and easy heatsink assembly.
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