GeneSiC Semiconductor GA05JT12-263

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  • Part Number:

    GA05JT12-263

  • Manufacturer:

    GeneSiC Semiconductor

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf GA05JT12-263_Datesheet

  • Description:

    TRANS SJT 1200V 15A D2PAK

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Drain to Source Voltage (Vdss)
1200 V
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Vgs(th) (Max) @ Id
-
Supplier Device Package
TO-263-7
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Grade
-
Technology
SiC (Silicon Carbide Junction Transistor)
Rds On (Max) @ Id, Vgs
-
Vgs (Max)
-
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Gate Charge (Qg) (Max) @ Vgs
-
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FET Type
-
Power Dissipation (Max)
106W (Tc)
Qualification
-
Overview

DESCRIPTION

· The document provides technical specifications for a microcontroller unit.

· It includes detailed information on the architecture, memory, and peripherals.



FEATURES

· High-performance 32-bit ARM Cortex-M4 CPU.

· Integrated flash memory up to 1MB.

· Multiple communication interfaces including USB, CAN, and Ethernet.



APPLICATIONS

· Industrial automation systems.

· Consumer electronics and IoT devices.

· Automotive control units and infotainment systems.



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