GigaDevice Semiconductor (HK) Limited GD25Q16EWIGR

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  • Part Number:

    GD25Q16EWIGR

  • Manufacturer:

    GigaDevice Semiconductor (HK) Limited

  • Category:

    Memory

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf GD25Q16EWIGR_Datesheet

  • Description:

    IC FLASH 16MBIT SPI/QUAD 8WSON

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Memory Interface
SPI - Quad I/O
Write Cycle Time - Word, Page
70µs, 2ms
Mounting Type
Surface Mount
Memory Format
FLASH
Access Time
7 ns
Memory Organization
2M x 8
Memory Type
Non-Volatile
Memory Size
16Mbit
Operating Temperature
-40°C ~ 85°C (TA)
Package / Case
8-WDFN Exposed Pad
Qualification
-
Clock Frequency
133 MHz
Grade
-
Technology
FLASH - NOR
Supplier Device Package
8-WSON (5x6)
Voltage - Supply
2.7V ~ 3.6V
Overview

DESCRIPTION

· The GD25Q16E is a 16M-bit uniform sector dual and quad serial flash memory.
· It supports standard SPI, Dual SPI, and Quad SPI operations.
· The device operates at a voltage range of 2.7V to 3.6V.
· It features a high-speed clock frequency of up to 104MHz.
· The memory is organized into 32 sectors, each 4K bytes in size.



FEATURES

· Uniform 4KB sector architecture for flexible data storage.
· Supports SPI modes 0 and 3 for compatibility.
· Fast read and program operations with high-speed clock.
· Low power consumption in standby and deep power-down modes.
· Hardware and software write protection for data security.



APPLICATIONS

· Ideal for consumer electronics, such as TVs and set-top boxes.
· Suitable for industrial control systems and automotive electronics.
· Used in networking equipment for firmware storage.
· Applicable in IoT devices for data logging and storage.
· Supports embedded systems requiring reliable non-volatile memory.



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