DESCRIPTION

· SiC Schottky Diode with zero reverse and forward recovery

· Temperature-independent switching behavior

· Positive temperature coefficient on VF

· Low stray inductance and high junction temperature operation

· All parts tested to greater than 715V

· Outstanding performance at high frequency operation

· Low loss and low EMI noise

· Very rugged and easy mounting

· Internally isolated package (Al2O3)

· Low junction to case thermal resistance

· Easy paralleling due to positive TC of VF

· RoHS compliant

FEATURES

· Continuous forward current: 84A at TC=25°C, Tj=175°C

· Maximum Ratings: VDC 600V, IF 30A

· Non-repetitive peak forward current: 2000A

· i2t value: 325 A2s

· Surge non-repetitive forward current sine halfwave: 280A at TC=110°C, tp=8.3ms

· Power dissipation: 225W

· Operating junction temperature: -55 to 175°C

· Repetitive peak reverse voltage: 600V

· Diode dv/dt ruggedness: 200 V/ns

APPLICATIONS

· Switched-mode power supply

· Induction heater

· Welding equipment

· Charging station