Toshiba Semiconductor and Storage GT8G133(TE12L,Q)

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GT8G133(TE12L,Q)

View All Single IGBTs by Toshiba Semiconductor and Storage

View All Single IGBTs by Toshiba Semiconductor and Storage

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Specifications
Type
Paramete
Type
Paramete
IGBT Type
-
Grade
-
Supplier Device Package
8-TSSOP
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Switching Energy
-
Qualification
-
Reverse Recovery Time (trr)
-
Current - Collector (Ic) (Max)
-
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Voltage - Collector Emitter Breakdown (Max)
400 V
Power - Max
600 mW
Current - Collector Pulsed (Icm)
150 A
Test Condition
-
Gate Charge
-
Td (on/off) @ 25°C
1.7µs/2µs
Vce(on) (Max) @ Vge, Ic
2.9V @ 4V, 150A
Input Type
Standard
Overview

DESCRIPTION

· The GT8G133 is a Silicon N Channel Insulated Gate Bipolar Transistor (IGBT) designed by Toshiba.



FEATURES

· Compact and Thin TSSOP-8 package.

· Enhancement-mode operation.

· Gate drive voltage of 4.0 V (min) at a collector current of 150 A.

· Peak collector current capability of 150 A (max).



APPLICATIONS

· Suitable for strobe flash applications.



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