Analog Devices Inc. HMC451LP3ETR

View All RF Accessories by Analog Devices Inc.

Part Number:
HMC451LP3ETR
Manufacturer:
Analog Devices Inc.
Category:
RF Accessories
RoHs:
Non-RoHS Compliant
Datasheet:
Description:
RF Amplifier IC General Purpose 5GHz ~ 18GHz 16-QFN (3x3)
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Overview

HMC451LP3ETR GaAs PHEMT MMIC Medium Power Amplifier Datasheet Summary

1. Basic Device Information

Part Number: HMC451LP3ETR
Technology: GaAs PHEMT MMIC
Device Type: Medium power RF amplifier
Frequency Range: 5 GHz to 18 GHz
Package: 16‑lead leadless QFN (LFCSP‑16), 3 mm × 3 mm with exposed pad (EP)
Packaging: Tape‑and‑reel (TR suffix)
RoHS: Compliant (E suffix)
Lead Finish: 100% matte tin
MSL Rating: MSL 1 (unlimited floor life)
Max Peak Reflow Temp: 260 °C
Marking: 451XXXX (4‑digit lot code)
Operating Temperature: −40 °C to +85 °C
Manufacturer: Analog Devices
Document Version: v02.0121

2. Key Features

Gain: 18 dB typical at 5–16 GHz; 16 dB typical at 16–18 GHz
Saturated Output Power (Psat): +21 dBm at 5–16 GHz; +20 dBm at 16–18 GHz
PAE: 18% typical at Psat
Output IP3: +28 dBm typical at 5–16 GHz; +25 dBm typical at 16–18 GHz
Single Supply: +5 V @ 120 mA typical
50 Ω matched input and output
RF I/O internally DC‑blocked
No external matching components required
Surface‑mountable, no wire bonding
Gain variation over temperature: 0.02–0.03 dB/°C
Noise Figure: 7 dB typical across band

3. Electrical Specifications (TA = 25 °C, VDD1 = VDD2 = +5 V)

Parameter	5–16 GHz (Min/Typ/Max)	16–18 GHz (Min/Typ/Max)	Unit
Gain	15 / 18 / —	12.5 / 16 / —	dB
Input Return Loss	— / 13 / —	— / 13 / —	dB
Output Return Loss	— / 12 / —	— / 8 / —	dB
P1dB	16.5 / 19.5 / —	16 / 19 / —	dBm
Psat	— / 21 / —	— / 20 / —	dBm
OIP3	— / 28 / —	— / 25 / —	dBm
Noise Figure	— / 7 / —	— / 7 / —	dB
Supply Current (IDD)	— / 120 / 150	— / 120 / 150	mA

4. Absolute Maximum Ratings

Parameter	Value
Drain Bias Voltage (VDD1, VDD2)	+5.5 V
RF Input Power	+10 dBm
Channel Temperature	175 °C
Continuous Power Dissipation (TA ≤ 85 °C)	1.15 W
Derate Above 85 °C	12.8 mW/°C
Thermal Resistance (Channel‑to‑Paddle)	78 °C/W
Storage Temperature	−65 °C to +150 °C
Operating Temperature	−40 °C to +85 °C
ESD (HBM)	Class 1A, 250 V

5. Recommended Operating Conditions

Parameter	Min	Typ	Max	Unit
Supply Voltage (VDD)	4.5	5.0	5.5	V
Supply Current	—	120	150	mA
Frequency	5	—	18	GHz
Temperature	−40	—	85	°C

6. Pin Configuration (16‑Lead QFN‑EP)

Pin Numbers	Function	Description
1, 2, 4–9, 11, 12, 14, 16	N/C	May be grounded; no performance impact
3	RFIN	50 Ω RF input, AC‑coupled
10	RFOUT	50 Ω RF output, AC‑coupled
13	VDD2	Drain supply; requires bypass caps
15	VDD1	Drain supply; requires bypass caps
Exposed Pad	GND	Must be soldered to RF/DC ground

7. Application & Bypass Requirements

Required Bypass Capacitors (VDD1 & VDD2):
Impedance: 50 Ω RF lines
PCB: Use ground plane, multiple vias to exposed pad
Heatsinking: Recommended for high‑temperature operation

8. Typical Applications

Microwave radio & VSAT
Military & aerospace systems
Test equipment & sensors
Fiber‑optic communication
LO driver for HMC mixers
Wideband gain blocks

9. Package & Mechanical Data

Body Size: 3.0 mm × 3.0 mm
Height: 0.85 mm
Package Area: 9 mm²
Coplanarity: 0.08 mm max
JEDEC Reference: MO‑220‑VEED‑4
Pin‑1 Indicator: Standard mark

10. Reliability & Ruggedness

ESD: Class 1A (250 V HBM)
MSL 1: unlimited shelf life
Stable gain over temperature
Wide dynamic range and linearity

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