IceMOS Technology ICE15N73

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  • Part Number:

    ICE15N73

  • Manufacturer:

    IceMOS Technology

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf ICE15N73_Datesheet

  • Description:

    Superjunction MOSFET

  • In stock 100
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Specifications
Type
Paramete
Type
Paramete
Drain to Source Voltage (Vdss)
730 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Qualification
-
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Package / Case
TO-220-3
FET Type
N-Channel
Power Dissipation (Max)
208W (Tc)
Rds On (Max) @ Id, Vgs
350mOhm @ 7.5A, 10V
Supplier Device Package
TO-220
Input Capacitance (Ciss) (Max) @ Vds
2816 pF @ 100 V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Grade
-
Vgs (Max)
±20V
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
3.5V @ 250µA
Overview

DESCRIPTION

· The ICE15N73 is a N-Channel Enhancement Mode MOSFET designed for high-performance power systems.

· It features low rDS(on), ultra-low gate charge, and high dv/dt capability.

· The device is optimized for applications requiring high peak current and unclamped inductive switching (UIS) capability.



FEATURES

· Low rDS(on) of 0.18 Ω at VGS =10V.

· Ultra-low gate charge of 75nC at VDS =480V.

· High dv/dt ruggedness of 50 V/ns at VDS =480V, ID=15A, Tj=125°C.

· High unclamped inductive switching (UIS) capability.

· High peak current capability of 35A at Tc=25°C.

· Increased transconductance performance.



APPLICATIONS

· High-performance power systems.

· Applications requiring high peak current and unclamped inductive switching (UIS) capability.

· Power management and conversion systems.

· Industrial and automotive power applications.



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