IceMOS Technology ICE22N60W

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  • Part Number:

    ICE22N60W

  • Manufacturer:

    IceMOS Technology

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf ICE22N60W_Datesheet

  • Description:

    Superjunction MOSFET

  • In stock 90
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Specifications
Type
Paramete
Type
Paramete
FET Feature
-
Package / Case
TO-247-3
Mounting Type
Through Hole
Supplier Device Package
TO-247
Vgs(th) (Max) @ Id
3.9V @ 250µA
Grade
-
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Qualification
-
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2730 pF @ 25 V
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
208W (Tc)
Rds On (Max) @ Id, Vgs
160mOhm @ 11A, 10V
Drain to Source Voltage (Vdss)
600 V
Overview

DESCRIPTION

· The ICE22N60W is an N-Channel Enhancement Mode MOSFET designed for high-performance power systems.

· It features a maximum continuous drain current of 22A at 25°C and a minimum drain-source voltage of 600V.

· The device is optimized for low on-resistance and ultra-low gate charge, making it suitable for efficient power management.



FEATURES

· Low rDS(on) of 0.14Ω typical at VGS=10V.

· Ultra-low gate charge of 72nC typical at VDS=480V.

· High dV/dt capability and high unclamped inductive switching (UIS) capability.

· High peak current capability and increased transconductance performance.

· Optimized design for high-performance power systems.



APPLICATIONS

· Suitable for high-efficiency power supplies and inverters.

· Ideal for motor control and power management systems.

· Can be used in industrial and automotive applications requiring high reliability and performance.



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