Name: ICE30N60W
Brand: IceMOS Technology
SKU: JM-ICE30N60W
Availability: InStock

IceMOS Technology ICE30N60W

View All Single FETs, MOSFETs by IceMOS Technology

Part Number:
ICE30N60W
Manufacturer:
IceMOS Technology
Category:
Single FETs, MOSFETs
RoHs:
Non-RoHS Compliant
Datasheet:
ICE30N60W_Datesheet
Description:
Superjunction MOSFET
In stock 90

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Specifications

Type

Paramete

Type

Paramete

Package / Case

TO-247-3

Input Capacitance (Ciss) (Max) @ Vds

6090 pF @ 25 V

Mounting Type

Through Hole

Drain to Source Voltage (Vdss)

600 V

Drive Voltage (Max Rds On, Min Rds On)

10V

Operating Temperature

-55°C ~ 150°C (TJ)

FET Feature

Power Dissipation (Max)

171W (Tc)

Qualification

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Gate Charge (Qg) (Max) @ Vgs

189 nC @ 10 V

FET Type

N-Channel

Grade

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±20V

Supplier Device Package

TO-247

Vgs(th) (Max) @ Id

3.9V @ 250µA

Rds On (Max) @ Id, Vgs

68mOhm @ 15A, 10V

Overview

DESCRIPTION

· The ICE30N60W is an N-Channel Enhancement Mode MOSFET designed for high-performance power systems. It features a TO247 package and is optimized for low on-resistance and ultra-low gate charge.

FEATURES

· TO247 package for robust performance.

· Low rDS(on) of 0.06 Ω (typ) at VGS = 10V.

· Ultra-low gate charge of 189nC (typ) at VDS = 480V.

· High dv/dt capability and high unclamped inductive switching (UIS) capability.

· High peak current capability and increased transconductance performance.

· Designed for high-performance power systems.

APPLICATIONS

· Suitable for high-performance power systems requiring efficient switching and robust performance.

· Ideal for applications demanding high dv/dt and UIS capabilities.

· Used in systems where low on-resistance and ultra-low gate charge are critical.

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