IceMOS Technology ICE47N60W

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  • Part Number:

    ICE47N60W

  • Manufacturer:

    IceMOS Technology

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf ICE47N60W_Datesheet

  • Description:

    Superjunction MOSFET

  • In stock 2,100
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Specifications
Type
Paramete
Type
Paramete
Power Dissipation (Max)
431W (Tc)
Supplier Device Package
TO-247
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
189 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Qualification
-
Drain to Source Voltage (Vdss)
600 V
Vgs(th) (Max) @ Id
3.9V @ 250µA
FET Type
N-Channel
Package / Case
TO-247-3
Input Capacitance (Ciss) (Max) @ Vds
5718 pF @ 25 V
Rds On (Max) @ Id, Vgs
68mOhm @ 24A, 10V
Grade
-
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Overview

DESCRIPTION

· The ICE47N60W is an N-Channel Enhancement Mode MOSFET designed for high-performance power systems.

· It features a TO247 package and is optimized for low rDS(on) and ultra-low gate charge.

· The device is capable of high dV/dt, high unclamped inductive switching (UIS), and high peak current.



FEATURES

· TO247 package for robust thermal performance.

· Low rDS(on) of 0.06 Ω (Typ) at VGS = 10V.

· Ultra-low gate charge of 189nC (Typ) at VDS = 240V.

· High dV/dt capability of 50 V/ns at VDS = 480V, ID = 47A, Tj = 125°C.

· High unclamped inductive switching (UIS) capability with avalanche energy of 2000 mJ at ID = 20A.

· High peak current capability with pulsed drain current of 117A at Tc = 25°C.

· Increased transconductance performance for efficient power handling.



APPLICATIONS

· Suitable for high-performance power systems requiring efficient switching and thermal management.

· Ideal for applications demanding high dV/dt and UIS capabilities, such as power inverters and motor drives.

· Can be used in systems requiring high peak current handling, such as power supplies and converters.

· Suitable for applications in automotive, industrial, and consumer electronics where robust MOSFET performance is critical.

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