Microchip Technology ICPB2002-1-110I


- Part Number:
ICPB2002-1-110I
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant
- Datasheet:
ICPB2002-1-110I_Datesheet
- Description:
DC-12 GHZ 12W DISCRETE GAN HEMT
- In stock 0
DESCRIPTION
· The ICPB2002 is a GaN on SiC discrete HEMT designed for operation from DC to 12GHz in both pulsed and CW modes. It is optimized for power and efficiency using field plate technology.
FEATURES
· Frequency Range: DC -12GHz
· Nominal P 3dB: 41.5dBm
· Maximum PAE at 6GHz: 65%
· Drain Bias: 28V
· Technology: GaN on SiC
· Lead-free and RoHS compliant
· Chip Dimensions: 0.81 x 1.14 x 0.10mm
APPLICATIONS
· Aerospace & Defense
· Broadband Wireless
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Microchip Technology

Microchip Technology

Microchip Technology

Microchip Technology

Microchip Technology

Microchip Technology

Microchip Technology

Microchip Technology

Microchip Technology

Microchip Technology

Microchip Technology

Microchip Technology