Infineon Technologies IJW120R070T1FKSA1

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  • Part Number:

    IJW120R070T1FKSA1

  • Manufacturer:

    Infineon Technologies

  • Category:

    JFETs

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf IJW120R070T1FKSA1_Datesheet

  • Description:

    JFET N-CH 1.2KV 35A TO247-3

  • In stock 330
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Specifications
Type
Paramete
Type
Paramete
Mounting Type
Through Hole
Current Drain (Id) - Max
35 A
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-247-3
Voltage - Breakdown (V(BR)GSS)
1200 V
Power - Max
238 W
Supplier Device Package
PG-TO247-3
Resistance - RDS(On)
70 mOhms
Grade
-
Voltage - Cutoff (VGS off) @ Id
-
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 19.5V (VGS)
Drain to Source Voltage (Vdss)
1200 V
Current - Drain (Idss) @ Vds (Vgs=0)
3.3 µA @ 1200 V
Qualification
-
FET Type
N-Channel
Overview

DESCRIPTION

· The IJW120R070T1 is a 1200V Silicon Carbide (SiC) Junction Field Effect Transistor (JFET) from the CoolSiC™ series.
· Designed for high efficiency and reliability in power management applications.
· Features a robust design suitable for harsh environments.

FEATURES

· High voltage capability up to 1200V.
· Low on-resistance for reduced power loss.
· High thermal conductivity and temperature stability.
· Fast switching speeds to enhance performance in high-frequency applications.

APPLICATIONS

· Ideal for use in power supplies and inverters.
· Suitable for renewable energy systems, including solar and wind power.
· Effective in electric vehicle (EV) charging stations and motor drives.
· Applicable in industrial power systems and high-efficiency converters.

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