Name: IJW120R100T1FKSA1
Brand: Infineon Technologies
SKU: JM-IJW120R100T1FKSA1
Availability: InStock

Infineon Technologies IJW120R100T1FKSA1

View All JFETs by Infineon Technologies

Part Number:
IJW120R100T1FKSA1
Manufacturer:
Infineon Technologies
Category:
JFETs
RoHs:
Non-RoHS Compliant
Datasheet:
IJW120R100T1FKSA1_Datesheet
Description:
JFET N-CH 1.2KV 26A TO247-3
In stock 0

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Specifications

Type

Paramete

Type

Paramete

Drain to Source Voltage (Vdss)

1200 V

Qualification

Current - Drain (Idss) @ Vds (Vgs=0)

1.5 µA @ 1200 V

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 19.5V (VGS)

Voltage - Cutoff (VGS off) @ Id

Operating Temperature

-55°C ~ 175°C (TJ)

Resistance - RDS(On)

100 mOhms

Current Drain (Id) - Max

26 A

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

1200 V

Power - Max

190 W

Grade

Overview

DESCRIPTION

· The IJW120R100T1 is a 1200V Silicon Carbide (SiC) Junction Field Effect Transistor (JFET) from the CoolSiC™ series.

· Designed for high efficiency and reliability in power management applications.

· Features low on-resistance and high switching speed, suitable for demanding environments.

FEATURES

· High voltage rating of 1200V for robust performance.

· Low on-resistance minimizes power loss and enhances efficiency.

· Fast switching capabilities reduce switching losses.

· High thermal conductivity ensures effective heat dissipation.

· RoHS compliant, adhering to environmental standards.

APPLICATIONS

· Ideal for use in power supplies and converters.

· Suitable for renewable energy systems, including solar inverters.

· Effective in motor drives and industrial automation.

· Applicable in electric vehicle (EV) charging stations.

· Used in high-frequency and high-efficiency power systems.

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