Panjit International Inc. IMZ1AS-AU_S1_000A1

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IMZ1AS-AU_S1_000A1

View All Bipolar Transistor Arrays by Panjit International Inc.

View All Bipolar Transistor Arrays by Panjit International Inc.

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Specifications
Type
Paramete
Type
Paramete
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 6V
Operating Temperature
-55°C ~ 150°C (TJ)
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
150mA
Package / Case
SOT-23-6
Qualification
AEC-Q101
Transistor Type
1 NPN, 1 PNP Complementary
Current - Collector Cutoff (Max)
100nA (ICBO)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-6
Frequency - Transition
180MHz, 140MHz
Grade
Automotive
Power - Max
300mW
Overview

DESCRIPTION

· Complementary Dual General Purpose Transistor with PNP/NPN epitaxial type.

· Voltage rating: 50V / -50V, Current rating: 0.15A / -0.15A.

· Packaged in SOT-23 6L, compliant with EU RoHS 2.0 and IEC 61249 standards.



FEATURES

· Includes one PNP (Tr1) and one NPN (Tr2) transistor.

· Suitable for low power amplification and switching applications.

· AEC-Q101 qualified, ensuring reliability in automotive applications.

· Lead-free and green molding compound used.



APPLICATIONS

· Ideal for use in low power amplification circuits.

· Effective in switching applications within specified voltage and current limits.

· Suitable for automotive electronics due to AEC-Q101 qualification.

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Shipping Rate

We ship orders once a day around 5 p.m., except Sunday. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

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Shipping Methods

We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.

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Payment

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