Name: IRLR3705ZTRPBF
Brand: Infineon Technologies
SKU: JM-IRLR3705ZTRPBF
Availability: InStock

Infineon Technologies IRLR3705ZTRPBF

View All Single FETs, MOSFETs by Infineon Technologies

Part Number:
IRLR3705ZTRPBF
Manufacturer:
Infineon Technologies
Category:
Single FETs, MOSFETs
RoHs:
RoHS Compliant
Datasheet:
IRLR3705ZTRPBF_Datesheet
Description:
MOSFET N-CH 55V 42A DPAK
In stock 4,215

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Specifications

Type

Paramete

Type

Paramete

FET Type

N-Channel

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±16V

Operating Temperature

-55°C ~ 175°C (TJ)

Vgs(th) (Max) @ Id

3V @ 250µA

Drain to Source Voltage (Vdss)

55 V

Gate Charge (Qg) (Max) @ Vgs

66 nC @ 5 V

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Mounting Type

Surface Mount

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

FET Feature

Input Capacitance (Ciss) (Max) @ Vds

2900 pF @ 25 V

Qualification

Rds On (Max) @ Id, Vgs

8mOhm @ 42A, 10V

Supplier Device Package

TO-252AA (DPAK)

Grade

Power Dissipation (Max)

130W (Tc)

Overview

DESCRIPTION

· HEXFET® Power MOSFET with VDSS = 55V and RDS(on) = 8.0mΩ, ID = 42A.

· Utilizes advanced processing techniques for low on-resistance per silicon area.

· Designed for high efficiency and reliability in various applications.

FEATURES

· Logic Level compatible.

· Advanced Process Technology.

· Ultra Low On-Resistance.

· Operating Temperature up to 175°C.

· Fast Switching capabilities.

· Repetitive Avalanche allowed up to Tjmax.

· Lead-Free design.

APPLICATIONS

· Suitable for a wide range of power management applications.

· Ideal for high-efficiency power conversion systems.

· Used in automotive, industrial, and consumer electronics.

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Infineon Technologies IRLR3705ZTRPBF

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