Infineon Technologies IRLZ44NL

View All Single, Pre-Biased Bipolar Transistors by Infineon Technologies

Part Number:
IRLZ44NL
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
IRLZ44NL_Datesheet
Description:
MOSFET N-CH 55V 47A TO262
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Specifications

Type

Paramete

Type

Paramete

Grade

Drain to Source Voltage (Vdss)

55 V

Supplier Device Package

TO-262

Vgs(th) (Max) @ Id

2V @ 250µA

Rds On (Max) @ Id, Vgs

22mOhm @ 25A, 10V

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Input Capacitance (Ciss) (Max) @ Vds

1700 pF @ 25 V

FET Feature

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±16V

Gate Charge (Qg) (Max) @ Vgs

48 nC @ 5 V

Power Dissipation (Max)

3.8W (Ta), 110W (Tc)

Mounting Type

Through Hole

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

FET Type

N-Channel

Qualification

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-262-3 Long Leads, I2PAK, TO-262AA

Overview

IRLZ44NL – Complete Datasheet Summary

Infineon 55 V Logic-Level HEXFET Power MOSFET, Through-Hole TO-262 (I²PAK), Lead-Free

1. Device Identity

Base Part No.: IRLZ44N
Package Variant: IRLZ44NL (L = low-profile TO-262 / I²PAK)
Order Code: IRLZ44NLPbF (PbF = lead-free, RoHS)
Technology: 5th-generation HEXFET trench, logic-level gate drive
Manufacturer: Infineon Technologies (formerly International Rectifier)

2. One-Line Description

55 V, 47 A continuous, 22 mΩ max logic-level MOSFET in TO-262 for high-efficiency switching from 3.3 V / 5 V GPIO.

3. Key Features

Logic-Level Gate – fully enhanced with VGS = 4.5 V
Ultra-Low RDS(on) 0.022 Ω @ 10 V, 0.025 Ω @ 5 V, 0.035 Ω @ 4 V
175 °C Operating Junction (silicon limited)
Fully Avalanche Rated – 210 mJ single-pulse, 25 A avalanche current
Fast Switching – 11 ns td(on), 15 ns td(off)
Low Package Profile – 2.3 mm seated height vs. standard TO-220
Lead-Free (PbF) and RoHS compliant
Compatible with existing TO-220 footprints (same 2.54 mm pin spacing)

4. Absolute Maximum Ratings (@ TJ = 25 °C unless noted)

Parameter	Symbol	Value	Unit
Drain-Source Voltage	VDS	55	V
Continuous Drain Current (TC = 25 °C)	ID	47	A
Continuous Drain Current (TC = 100 °C)	ID	33	A
Pulsed Drain Current (tP ≤ 10 µs)	IDM	160	A
Max Power Dissipation (TC = 25 °C)	PD	110	W
Max Power Dissipation (TA = 25 °C, PCB mounted)	PD	3.8	W
Linear Derating Factor	–	0.71	W/°C
Gate-Source Voltage	VGS	±16	V
Single-Pulse Avalanche Energy	EAS	210	mJ
Avalanche Current	IAR	25	A
Repetitive Avalanche Energy	EAR	11	mJ
Peak Diode Recovery dv/dt	dv/dt	5	V/ns
Operating & Storage TJ	–	–55 … +175	°C
Soldering Temperature (1.6 mm from case, 10 s)	–	300	°C

5. Thermal Characteristics

Parameter	Typ	Max	Unit
Junction-to-Case (steady-state)	1.4	1.4	°C/W
Junction-to-Ambient (PCB mounted, steady-state)	–	40	°C/W

6. Electrical Characteristics (@ TJ = 25 °C unless noted)

Parameter	Conditions	Min	Typ	Max	Unit
Static
V(BR)DSS	ID = 250 µA, VGS = 0 V	55	–	–	V
RDS(on)	VGS = 10 V, ID = 25 A	–	0.022	0.025	Ω
RDS(on)	VGS = 5 V, ID = 25 A	–	–	0.025	Ω
RDS(on)	VGS = 4 V, ID = 21 A	–	–	0.035	Ω
VGS(th)	VDS = VGS, ID = 250 µA	1.0	–	2.0	V
gfs	VDS = 25 V, ID = 25 A	–	21	–	S
IDSS	VDS = 55 V, VGS = 0 V	–	–	25	µA
IDSS	VDS = 44 V, TJ = 150 °C	–	–	250	µA
IGSS	VGS = ±16 V	–	–	±100	nA
Dynamic
Qg	VGS = 5 V, VDS = 44 V, ID = 25 A	–	48	–	nC
Qgs	–	–	8.6	–	nC
Qgd	–	–	25	–	nC
td(on)	VDD = 28 V, ID = 25 A, RG = 3.4 Ω	–	11	–	ns
tr	–	–	84	–	ns
td(off)	–	–	26	–	ns
tf	–	–	15	–	ns
Ciss	VGS = 0 V, VDS = 25 V, f = 1 MHz	–	1700	–	pF
Coss	–	–	400	–	pF
Crss	–	–	150	–	pF
Source-Drain Diode
IS	MOSFET symbol	–	–	47	A
ISM	–	–	160	A
VSD	TJ = 25 °C, IS = 25 A, VGS = 0 V	–	–	1.3	V
trr	TJ = 25 °C, IF = 25 A, di/dt = 100 A/µs	–	80	120	ns
Qrr	–	–	210	320	nC

7. Package Outline – TO-262 (I²PAK)

3 leads, low-profile (2.3 mm seated)
Industry-standard 2.54 mm pin spacing – drop-in replacement for TO-220 in many designs
Lead finish: matte tin, Ni-barrier, Pb-free, RoHS
Weight: 1.6 g typical
Part marking:Line 1: International Rectifier logoLine 2: IRLZ44NLLine 3: Date-code & lead-free flag (P)Line 4: Lot-code & assembly site

8. Tape & Reel Information (optional for TO-262)

Tube packing: 50 pcs/tube (standard)
Bulk box: 500 pcs
Reel option: 800 pcs / 330 mm reel (special order)

9. Typical Applications

3.3 V / 5 V logic-driven high-side or low-side switches
DC motors, solenoids, relays
PWM control of LED strips, heaters, fans
Switch-mode power supplies (sync-rectifier)
Battery management & e-fuse
Automotive auxiliary loads (after qualified design review)

10. Recommended Footprint & Soldering

Follow TO-220 pad pattern; heatsink hole Ø 3.3 mm
Solder by wave or hand; max 300 °C, 10 s, 1.6 mm from case
Application note AN-994 for reflow & thermal guidelines

11. Related / Alternative Parts

IRLZ44NS – same die in D²PAK surface-mount
IRLZ44NPbF – TO-220 full-height, lead-free
IRLB8721PbF – lower RDS(on) 8.7 mΩ, 30 V logic-level
BSC097N06NS5 – 60 V OptiMOS™ 5, 9.7 mΩ, SON 5×6

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