DESCRIPTION

· High voltage, high speed power MOSFET and IGBT drivers
· Independent high-side and low-side referenced output channels
· HVIC and latch immune CMOS technologies for ruggedized monolithic construction
· Compatible with standard CMOS or LSTTL output, down to 3.3 V logic
· High pulse current buffer stage for minimum driver cross-conduction
· Floating channel for driving N-channel power MOSFET or IGBT in high-side configuration up to 600 V

FEATURES

· Floating channel for bootstrap operation
· Fully operational to +600 V
· Tolerant to negative transient voltage
· dV/dt immune
· Gate drive supply range from 10 V to 20 V
· Undervoltage lockout for both channels
· 3.3 V and 5 V logic compatible
· Matched propagation delay for both channels
· Logic and power ground +/- 5 V offset
· Lower di/dt gate driver for better noise immunity
· Output source/sink current 4 A / 4 A
· RoHS compliant

APPLICATIONS

· High-side and low-side driving in power conversion systems
· Motor control applications
· Switch-mode power supplies
· Inverters and converters
· Industrial and automotive systems