DESCRIPTION

· The LMG352xR030 GaN FET integrates a driver and protection features, targeting switch-mode power converters for enhanced power density and efficiency.

· It includes a silicon driver enabling switching speeds up to 150V/ns and a precision gate bias for improved switching SOA.

· Features adjustable gate drive strength (20V/ns to 150V/s) for EMI control and switching optimization.

· The LMG3526R030 variant offers zero-voltage detection (ZVD) for soft-switching converters.

· Advanced power management includes digital temperature reporting and fault detection capabilities.

FEATURES

· 650V GaN-on-Si FET with integrated gate driver, supporting 200V/ns FET hold-off and up to 2MHz switching frequency.

· Operates from 7.5V to 18V supply with robust protection features including overcurrent, short-circuit, and overtemperature protection.

· Withstands 720V surge during hard-switching and includes UVLO monitoring.

· Top-side cooled 12mm × 12mm VQFN package minimizes power loop inductance.

APPLICATIONS

· Switch-mode power converters.

· Merchant network and server PSU.

· Merchant telecom rectifiers.

· Solar inverters and industrial motor drives.

· Uninterruptible power supplies.