Microchip Technology MSCSM120HM16CTBL3NG

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  • Part Number:

    MSCSM120HM16CTBL3NG

  • Manufacturer:

    Microchip Technology

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf MSCSM120HM16CTBL3NG_Datesheet

  • Description:

    SIC 4N-CH 1200V 150A

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
464nC @ 20V
Power - Max
560W
Technology
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
150A
Operating Temperature
-55°C ~ 175°C (TJ)
Qualification
-
Supplier Device Package
-
Configuration
4 N-Channel (Phase Leg)
Vgs(th) (Max) @ Id
2.8V @ 2mA
Grade
-
Package / Case
Module
Input Capacitance (Ciss) (Max) @ Vds
6040pF @ 1000V
Rds On (Max) @ Id, Vgs
16mOhm @ 80A, 20V
Mounting Type
Chassis Mount
Overview

DESCRIPTION

· The MSCSM120HM16CTBL3NG is a dual phase leg 1200 V/150 A silicon carbide (SiC) MOSFET power module.



FEATURES

· High voltage rating of 1200 V.

· High current rating of 150 A.

· Utilizes silicon carbide (SiC) technology for enhanced performance.

· Designed for efficient power management in demanding applications.

· Sensitive to electrostatic discharge; requires proper handling procedures.



APPLICATIONS

· Suitable for high-power and high-efficiency applications.

· Ideal for use in power conversion systems.

· Applicable in renewable energy systems, such as solar inverters.

· Can be used in electric vehicle (EV) power systems.

· Suitable for industrial motor drives and power supplies.

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Shipping Rate

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